The new type simulation design platform of power semiconductor device was established in Runau recently. With the assistance of advanced simulation platform and combined test and analysis, the in-depth research on device structure and related basic theory carried out fruitfully. The leverage of cutting-edge theory and research platform made the company developed and mastered the key processing technology of 5” thyristor chip, GTO and IGCT. A full process capability of manufacturing thyristor, rectifier diode, schottky module, IGCT, IGBT, high-voltage & high-current thyristor, as well to built the pilot test platform for ultra-fast recovery diodes, all were available in Runau successfully. A further solid step to build the manufacture base of power electronics device in China, we are on the way.