High Frequency Thyristor Characteristics

Jiangsu Yangjie Runau Semiconductor Co.Ltd is the professional manufacture of high power semiconductor device as a part of Yangzhou Yangjie Electronic Technology Co. Ltd. The company continues to introduce and apply advanced manufacturing technologies as well to design, develop, inspect and produce high power thyristor, rectifier, power module and power assembly unit for global customer.

With the popularity of medium-frequency induction heating technology in industrial applications, more and more occasions need to use 4-8KHz, power 100-1000KW induction heating equipment for metal workpiece quenching and penetration heat treatment. The KA series of high frequency thyristors produced by our company have been used in various industries such as automotive, bearings, railway systems and so on.

1.Technical specifications of the main species:

a

2.Performance characteristics:

• All diffused structure
• Distributed gate design
• Excellent dynamic performance
• Excellent high frequency performance, 2.5KHz-10kHz
• Fast switching performance
• Low switching loss

3. Points for use

1). Use strong trigger measures. The device’s di/dt performance, turn-on time and turn-on loss are greatly affected by the gate trigger pulse. It is recommended to use the gate trigger conditions: gate trigger current amplitude IG = 10IGT; gate current rise time tr less than 1µs.

2). Series and parallel connection of high-frequency thyristors. In high-power high-frequency inverter circuit, the use of multiple high-frequency components in series or parallel connection, can obtain better high-frequency power performance. Device selection should be made by the manufacturer of the device series and parallel matching requirements.

3. High-frequency applications, need to pay attention to magnetic field of device induced by the high-frequency current will work on the metal materials. And the device own mounting screws and brackets will be induced by the induction heating effect.


Post time: Mar-23-2024