OEM China Semiconductor Zp - Fast Recovery Diode – Runau Electronics

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OEM China Semiconductor Zp - Fast Recovery Diode – Runau Electronics Detail:

Fast Recovery Diode

Description:

1. Unless otherwise stated, all the other parameters are the test values under Tjm;

2.I2t=I2FSM×tw/2, tw= Sinusoidal half wave current base width. At 50Hz, I2t=0.005I2FSM(A2S);

3.At 60Hz: IFSM(8.3ms)=IFSM(10ms)×1.066,Tj=Tj;I2t(8.3ms)=I2t(10ms)×0.943,Tj=Tjm.

Parameter:

TYPE IF(AV)
A
TC
VDRRM/VRRM
V
IFSM
@TVJIM&10ms
A
I2t
A2s
VFM
@IF&TJ=25℃
V  /   A
trr
μs
Tjm
Rjc
℃/W
Rc-s
℃/W
F
KN
m
Kg
CODE
Voltage up to 1800V
ZK300-** 300 70 1000~1800 4500 1.01×105 2.30 900 4 125 0.080 0.020 4 0.06 D1A
ZK400-** 400 70 1000~1800 6000 1.8×105 2.30 1200 4 125 0.054 0.010 10 0.08 D2A
ZK500-** 500 70 1000~1800 7500 2.8×105 2.30 1500 5 125 0.045 0.010 13 0.20 D3C
ZK800-** 800 70 1000~1800 9600 4.6×105 2.30 2400 5 125 0.039 0.008 15 0.26 D5C
ZK1200-** 1200 70 1000~1800 18000 1.62×106 2.20 3000 6 125 0.022 0.005 25 0.46 D8C
ZK1500-** 1500 70 1000~1800 21000 2.2×106 2.20 3000 6 125 0.016 0.005 28 0.65 D10C
ZK2000-** 2000 70 1000~1800 28000 3.9×106 2.20 3000 6 125 0.013 0.004 33 0.85 D11C
ZK3000-** 3000 70 1000~1800 45000 1.0×107 2.00 3000 6 125 0.010 0.003 35 1.10 D13C
Voltage up to 3000V
ZK200-** 200 70 2000~3000 3000 4.5×104 2.40 600 6 125 0.080 0.020 4 0.06 D1A
ZK300-** 300 70 2000~3000 4800 1.15×105 2.40 1200 6 125 0.054 0.010 10 0.08 D2A
ZK400-** 400 70 2000~3000 6400 2.0×105 2.40 1200 8 125 0.045 0.010 13 0.20 D3C
ZK500-** 500 70 2000~3000 9000 4.05×105 2.60 1500 8 125 0.039 0.008 15 0.26 D5C
ZK1000-** 1000 70 2000~3000 15000 1.12×106 2.60 3000 8 125 0.022 0.005 25 0.46 D8C
ZK1500-** 1500 70 2000~3000 22500 2.5×106 2.60 3000 8 125 0.015 0.005 30 0.72 D10C
ZK2000-** 2000 70 2000~3000 30000 4.5×106 2.60 3000 8 125 0.013 0.004 33 0.85 D11C
ZK2500-** 2500 70 2000~3000 38000 7.2×106 2.40 3000 8 125 0.010 0.003 35 1.10 D13C
Voltage up to 4500V
ZK500-** 500 70 4000~4500 7500 4.0×105 4.00 1000 8 125 0.039 0.008 15 0.26 D5C
ZK1000-** 1000 70 4000~4500 15000 1.1×106 3.50 1500 9 125 0.022 0.005 25 0.46 D8C
ZK2200-** 2200 70 4000~4500 33000 4.5×106 3.00 3000 12 125 0.010 0.003 35 1.10 D13C

Product detail pictures:

OEM China Semiconductor Zp - Fast Recovery Diode – Runau Electronics detail pictures

OEM China Semiconductor Zp - Fast Recovery Diode – Runau Electronics detail pictures

OEM China Semiconductor Zp - Fast Recovery Diode – Runau Electronics detail pictures

OEM China Semiconductor Zp - Fast Recovery Diode – Runau Electronics detail pictures

OEM China Semiconductor Zp - Fast Recovery Diode – Runau Electronics detail pictures


Related Product Guide:
Thyristor Definition

We enjoy an extremely good status among our prospects for our great merchandise top quality, competitive price and the ideal service for OEM China Semiconductor Zp - Fast Recovery Diode – Runau Electronics , The product will supply to all over the world, such as: Seattle, Barcelona, India, Due to our good products and services, we have received good reputation and credibility from local and international customers. If you need more information and are interested in any of our products, please feel free to contact us. We look forward to becoming your supplier in the near future.
  • After the signing of the contract, we received satisfactory goods in a short term, this is a commendable manufacturer.
    5 Stars By Laurel from Peru - 2018.10.01 14:14
    This manufacturer can keep improving and perfecting products and service, it is in line with the rules of market competition, a competitive company.
    5 Stars By Rosemary from Iran - 2018.02.08 16:45
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